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BTA316X-800E Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BTA316X-800E Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 13 page BTA316X_SER_B_C_E_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 11 April 2007 2 of 13 NXP Semiconductors BTA316X series B, C and E 16 A Three-quadrant triacs high commutation 3. Ordering information 4. Limiting values [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/ µs. Table 2. Ordering information Type number Package Name Description Version BTA316X-600B TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 ‘full pack’ SOT186A BTA316X-600C BTA316X-600E BTA316X-800B BTA316X-800C BTA316X-800E Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage BTA316X-600B; BTA316X-600C; BTA316X-600E [1] - 600 V BTA316X-800B; BTA316X-800C; BTA316X-800E - 800 V IT(RMS) RMS on-state current full sine wave; Th ≤ 45 °C; see Figure 4 and 5 -16 A ITSM non-repetitive peak on-state current full sine wave; Tj =25 °C prior to surge; see Figure 2 and 3 t = 20 ms - 140 A t = 16.7 ms - 150 A I2tI2t for fusing t = 10 ms - 98 A2s dIT/dt rate of rise of on-state current ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/ µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C |
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