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NE325S01-T1B Datenblatt(PDF) 1 Page - NEC

Teilenummer NE325S01-T1B
Bauteilbeschribung  C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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Hersteller  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NE325S01-T1B Datenblatt(HTML) 1 Page - NEC

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SYMBOLS
CHARACTERISTICS
UNITS MIN TYP MAX
VDS
Drain to Source Voltage
V
2
3
ID
Drain Current
mA
10
20
Pin
Input Power
dBm
0
FEATURES
• SUPER LOW NOISE FIGURE:
0.45 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN:
12.5 dB TYP at 12 GHz
• GATE LENGTH: ≤ 0.20 µm
• GATE WIDTH: 200 µm
• LOW COST PLASTIC PACKAGE
C to KU BAND SUPER LOW
NOISE AMPLIFIER N-CHANNEL HJ-FET
NE325S01
PART NUMBER
NE325S01
PACKAGE OUTLINE
S01
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF1
Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz
dB
0.45
0.55
GA1
Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz
dB
11.0
12.5
IDSS
Saturated Drain Current, VDS = 2 V, VGS = 0 V
mA
20
60
90
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
45
60
VGS(off)
Gate to Source Cutoff Voltage, VDS = 2 V,ID = 100 µAV
-0.2
-0.7
-2.0
IGSO
Gate to Source Leak Current, VGS = -3 V
µA
0.5
10
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Frequency, f (GHz)
California Eastern Laboratories
RECOMMENDED
OPERATING CONDITIONS (TA = 25°C)
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
1.0
0.5
0
12
4
6
8 10
14
20
30
4
8
12
16
20
24
VDS = 2 V
ID = 10 mA
Ga
NF
DESCRIPTION
The NE325S01 is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. Its excellent low noise figure and high
associated gain make it suitable for commercial systems and
industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.


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