FREQ.

(GHz)

(dB)

(dB)

MAG

ANG

Rn/50

1

0.30

22.0

0.81

10

0.39

2

0.31

19.0

0.79

17

0.36

4

0.35

16.0

0.75

31

0.33

6

0.38

14.2

0.72

45

0.30

8

0.43

12.9

0.70

59

0.27

10

0.50

12.0

0.68

77

0.24

12

0.60

11.0

0.66

92

0.22

14

0.71

10.6

0.64

108

0.19

16

0.85

10.0

0.62

126

0.18

18

1.0

9.5

0.58

140

0.15

20

1.2

9.0

0.55

153

0.13

22

1.5

8.6

0.52

164

0.11

24

1.8

8.3

0.49

175

0.10

26

2.1

7.9

0.48

-176

0.08

28

2.4

7.6

0.46

-168

0.07

30

2.8

7.3

0.46

-160

0.05

SYMBOLS

PARAMETERS

UNITS

RATINGS

Drain to Source Voltage

V

4.0

Gate to Source Voltage

V

-3.0

Drain Current

mA

Gate Current

µA

200

Channel Temperature

°C

175

Storage Temperature

°C

-65 to +175

Total Power Dissipation

mW

200

Notes:

1. Noise Parameters include Bond Wires.

Gate:

Total 2 wires, 1 per bond pad 0.0132" (335

µm) long

each wire.

Drain:

Total 2 wires, 1 per bond pad 0.0094" (240

µm)

long each wire.

Source: Total 4 wires, 2 per side, 0.0070" (178

µm) long

each wire.

Wire:

0.0007" (17.8

µm) dia. gold.

2. Data at 28 and 30 GHz is extrapolated, not measured.

Infinite

Heat sink

0

25

50

75

100

125

150

175

200

250

200

150

100

50

0

°C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

1.4

1.2

1

0.8

0.6

0.4

0.2

0

14

13

12

11

10

9

8

7

0

510

15

20

25

30

35

NF

50

40

30

20

10

0

0

VGS

0.0 V

-0.15 V

-0.30 V

-0.45 V

-0.60 V

1

23

NOISE FIGURE & ASSOCIATED

GAIN vs. DRAIN CURRENT

Notes:

1. Operation in excess of any one of these conditions may result in

permanent damage .

2. With chip mounted on an alumina heat sink (size: 3 x 3 x 0.6 mm

thick).

NE24200