Datenblatt-Suchmaschine für elektronische Bauteile |
|
NE32400 Datenblatt(PDF) 1 Page - NEC |
|
NE32400 Datenblatt(HTML) 1 Page - NEC |
1 / 5 page FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz •LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. This device features mushroom shaped TiAl gates for decreased gate resistance and im- proved power handling capabilities. The mushroom gate re- sults in lower noise figure and high associated gain for con- sumer and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE32400 PACKAGE OUTLINE 00 (CHIP) SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NFOPT1 Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 GHz dB 0.35 f = 12 GHz dB 0.6 0.7 GA1 Associated Gain at VDS = 2 V, IDS = 10 mA f = 4 GHz dB 16.0 f = 12 GHz dB 10.0 11.0 P1dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA dBm 9.5 VDS = 2 V, IDS = 20 mA dBm 11.0 G1dB Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA dB 11.8 VDS = 2 V, IDS = 20 mA dB 12.8 IDSS Saturated Drain Current at VDS = 2 V, VGS = 0 V mA 15 40 70 VP Pinch-Off Voltage at VDS = 2 V, IDS = 100 µA V -2.0 -0.8 -0.2 gm Transconductance at VDS = 2 V, IDS = 10 mA mS 45 60 IGSO Gate to Source Leakage Current at VGS = -3 V µA 0.5 10 RTH (CH-C)2 Thermal Resistance (Channel-to-Case) °C/W 260 ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink. NE32400 Frequency, f (GHz) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA California Eastern Laboratories GA NF 3 2.5 2 1.5 1 0.5 0 24 21 18 15 12 9 6 1 10 20 30 |
Ähnliche Teilenummer - NE32400_98 |
|
Ähnliche Beschreibung - NE32400_98 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |