TYN810RG datasheet(2/6 Pages) STMICROELECTRONICS

Teilenummer	TYN810RG

Bauteilbeschribung	10A SCR

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Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Table 5: Thermal Resistance

Symbol

Test Conditions

Value

Unit

IGT

VD = 12 V (D.C.)

RL = 33 Ω

MAX.

15

mA

VGT

MAX.

1.5

V

VGD

VD = VDRM RL = 3.3 kΩ

Tj = 110°C

MIN.

0.2

V

tgt

VD = VDRM IG = 40 mA dIG/dt = 0.5 A/µs

TYP.

2

µs

IH

IT = 100 mA Gate open

MAX.

30

mA

IL

IG = 1.2 x IGT

TYP.

50

mA

dV/dt

Linear slope up to:

VD = 67 % VDRM Gate open

Tj = 110°C

MIN.

200

V/µs

VTM

ITM = 20 A tp = 380 µs

MAX.

1.6

V

IDRM

IRRM

VDRM = VRRM

Tj = 25°C

MAX.

10

µA

Tj = 110°C

2mA

tq

VD = 67 % VDRM ITM = 20 A VR = 25 V

dITM/dt = 30 A/µs dVD/dt = 50 V/µs

Tj = 110°C

TYP.

70

µs

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (D.C.)

2.5

°C/W

Rth(j-a)

Junction to ambient

60

°C/W

Figure 1: Maximum average power dissipation

versus average on-state current

Figure

2:

Correlation

between

maximum

average power dissipation and maximum

allowable temperature (Tamb and Tlead)

P(W)

I

(A)

T(AV)

360°

α

α = 180°

DC

α = 120°

α = 90°

α = 30°

α = 60°

12

10

8

6

4

2

0

1234

5

6

8

79

T

(°C)

amb

0

20

40

60

80

100

120

140

125

120

100

105

115

110

P(W)

T

(°C)

case

12

10

8

6

4

2

0

α = 180°

R = 6°C/W

th

R = 4°C/W

th

R = 2°C/W

th

R = 0°C/W

th

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