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TDA1300T Datenblatt(PDF) 7 Page - NXP Semiconductors |
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TDA1300T Datenblatt(HTML) 7 Page - NXP Semiconductors |
7 / 20 page 1997 Jul 15 7 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT THERMAL CHARACTERISTICS QUALITY SPECIFICATION In accordance with “SNW-FQ-611 part E”. The numbers of the quality specification can be found in the “Quality Reference Handbook”. The handbook can be ordered using the code 9397 750 00192. CHARACTERISTICS VDD = 3.3 V; VDDL = 2.5 V; Tamb =25 °C; RADJ =48kΩ; HG = logic 1; LS = logic 1; with an external low-pass filter (Rext = 750 Ω; Cext = 47 pF) connected at the RFE output pin. SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air TDA1300T 60 K/W TDA1300TT 128 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply IDD supply current laser off − 7 − mA VDD amplifier supply voltage 3 − 5.5 V VDDL laser control supply voltage 2.5 − 5.5 V P power dissipation laser off; VDD =3V − 20 − mW Diode current amplifiers (n = 1 to 6; m = 1 to 6) Ii(d) diode input current note 1 −− 10 µA In(i)(eq) equivalent noise input current − 1 − pA/ √Hz Vi(d) diode input voltage Ii(d) = 1.67 µA − 0.9 − V Vo(d) diode output voltage −0.2 − VDD − 1V Gd(n) diode current gain Ii(d) = 1.67 µA; Vo(d(n)) = 0 V; note 2 1.43 1.55 1.67 IO(d) diode offset current Ii(central) =Ii(satellite) =0; note 3 −− 100 nA Zo(d) output impedance Ii(d) = 1.67 µA; Vo(d(n)) =0V 500 −− k Ω B 3 dB bandwidth Ii(d) = 1.67 µA50 68 − kHz Gmm mismatch in gain between amplifiers Ii(d) = 1.67 µA; Vo(d(n)) =Vo(d(m)) −− 3% |
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