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TDA1519CTD Datenblatt(PDF) 7 Page - NXP Semiconductors

Teilenummer TDA1519CTD
Bauteilbeschribung  22WBTL or 2 x 11Wstereo power amplifier
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA1519CTD Datenblatt(HTML) 7 Page - NXP Semiconductors

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2000 Mar 08
7
Philips Semiconductors
Product specification
22 W BTL or 2
× 11 W stereo power
amplifier
TDA1519C
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
VP = 14.4 V; Tamb =25 °C; measurements taken using Fig.6; unless otherwise specified.
Notes
1. The circuit is DC adjusted at VP = 6 to 17.5 V and AC operating at VP = 8.5 to 17.5 V.
2. At VP = 17.5 to 30 V, the DC output voltage ≤0.5VP.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
TDA1519C
40
K/W
TDA1519CTH and TDA1519CTD
40
K/W
Rth(j-c)
thermal resistance from junction to case
TDA1519C
3
K/W
TDA1519CTH and TDA1519CTD
3
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VP
supply voltage
note 1
6.0
14.4
17.5
V
Iq(tot)
total quiescent current
40
80
mA
VO
DC output voltage
note 2
6.95
V
∆VOO
DC output offset voltage
−−
250
mV
Mute/standby switch
Vsw(on)
switch-on voltage level
8.5
−−
V
Mute condition
Vmute
mute voltage
3.3
6.4
V
VO
output signal in mute position
VI = 1 V (max.); f = 20 Hz to 15 kHz −−
20
mV
∆VOO
DC output offset voltage
−−
250
mV
Standby condition
Vstb
standby voltage
standby mode
0
2V
Istb
standby current
standby mode
−−
100
µA
Isw(on)
switch-on current
12
40
µA


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