IRLZ44NSPBF datasheet(4/10 Pages) IRF

Teilenummer	IRLZ44NSPBF

Bauteilbeschribung	HEXFET짰 Power MOSFET

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Hersteller	IRF [International Rectifier]

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4 / 10 page

IRLZ44NS/LPbF

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

400

800

1200

1600

2000

2400

2800

1

10

100

DS

V

, Drain-to-Source Voltage (V)

A

V

= 0V,

f = 1MHz

C

= C

+ C

, C

SHORTED

C

= C

C

= C

+ C

GS

iss

gs

gd

ds

rss

gd

oss

ds

gd

Ciss

Coss

Crss

0

3

6

9

12

15

0

1020

30405060

70

Q , Total Gate Charge (nC)

G

A

FOR TEST CIRCUIT

SEE FIGURE 13

V

= 44V

V

= 28V

I = 25A

DS

D

10

100

1000

0.4

0.8

1.2

1.6

2.0

2.4

T = 25°C

J

V

= 0V

GS

V

, Source-to-Drain Voltage (V)

SD

A

T = 175°C

J

1

10

100

1000

1

10

100

V

, Drain-to-Source Voltage (V)

DS

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10µs

100µs

1ms

10ms

A

T

= 25°C

T

= 175°C

Single Pulse

C

J

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