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2SJ670 Datenblatt(PDF) 2 Page - Sanyo Semicon Device

Teilenummer 2SJ670
Bauteilbeschribung  P-Channel Silicon MOSFET General-Purpose Switching Device
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Hersteller  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SJ670 Datenblatt(HTML) 2 Page - Sanyo Semicon Device

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2SJ670
No.8354-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Total Gate Charge
Qg
VDS=--50V, VGS=--10V, ID=--1.5A
11
nC
Gate-to-Source Charge
Qgs
VDS=--50V, VGS=--10V, ID=--1.5A
2.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--50V, VGS=--10V, ID=--1.5A
2
nC
Diode Forward Voltage
VSD
IS=--1.5A, VGS=0V
--0.83
--1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7007A-003
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
0.75
Top View
Bottom View
PW=10
µs
D.C.
≤1%
P.G
50
G
S
D
ID= --0.8A
RL=62.5Ω
VDD= --50V
VOUT
2SJ670
VIN
0V
--10V
VIN
ID -- VDS
ID -- VGS
0
0
--2.0
--2.5
--0.5
--3.0
--0.2
--0.4
--0.6
--1.5
--1.0
0
--1
--2
--6
--4
--5
--3
--2.0
--1.6
--0.8
--1.0
--1.4
--1.8
--1.2
IT06017
0
--1
--2
--3
--4
--5
--6
IT06018
VGS= --3.0V
--3.5V
--4.0V
--6.0V
VDS= --10V
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V


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