TIPP31C datasheet(1/6 Pages) POINN

Teilenummer	TIPP31C

Bauteilbeschribung	NPN SILICON POWER TRANSISTORS

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Hersteller	POINN [Power Innovations Ltd]

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TIPP31, TIPP31A, TIPP31B, TIPP31C

NPN SILICON POWER TRANSISTORS

PRODUCT

INFORMATION

1

MAY 1989 - REVISED MARCH 1997

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

q

20 W Pulsed Power Dissipation

q

100 V Capability

q

2 A Continuous Collector Current

q

4 A Peak Collector Current

q

Customer-Specified Selections Available

LP PACKAGE

(TOP VIEW)

MDTRAB

E

C

B

1

2

3

absolute maximum ratings

at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 6.4 mW/°C.

3. VCE = 20 V, IC = 1 A, tp = 10 ms, duty cycle ≤ 2%.

RATING

SYMBOL

VALUE

UNIT

Collector-base voltage (IE = 0)

TIPP31

TIPP31A

TIPP31B

TIPP31C

VCBO

40

60

80

100

V

Collector-emitter voltage (IB = 0)

TIPP31

TIPP31A

TIPP31B

TIPP31C

VCEO

40

60

80

100

V

Emitter-base voltage

VEBO

5

V

Continuous collector current

IC

2

A

Peak collector current (see Note 1)

ICM

4

A

Continuous base current

IB

1

A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Ptot

0.8

W

Pulsed power dissipation (see Note 3)

PT

20

W

Operating junction temperature range

Tj

-55 to +150

°C

Storage temperature range

Tstg

-55 to +150

°C

Lead temperature 3.2 mm from case for 10 seconds

TL

260

°C

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