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6N60L-ATA3-R Datenblatt(PDF) 3 Page - Unisonic Technologies |
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6N60L-ATA3-R Datenblatt(HTML) 3 Page - Unisonic Technologies |
3 / 7 page 6N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R502-117.A ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 6.2 A Maximum Pulsed Drain-Source Diode Forward Current ISM 24.8 A Reverse Recovery Time tRR 290 ns Reverse Recovery Charge QRR VGS = 0 V, IS = 6.2 A, dIF/dt = 100 A/µs (Note 4) 2.35 µC Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 16.8mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6.2A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature |
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