Datenblatt-Suchmaschine für elektronische Bauteile |
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STP22NF03L Datenblatt(PDF) 5 Page - STMicroelectronics |
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STP22NF03L Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 12 page STP22NF03L Electrical characteristics 5/12 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 22 88 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 22A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see Figure 15) 30 18 1.2 ns nC A |
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