Datenblatt-Suchmaschine für elektronische Bauteile |
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SB051C020-1-W-AG Datenblatt(PDF) 1 Page - TRANSYS Electronics Limited |
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SB051C020-1-W-AG Datenblatt(HTML) 1 Page - TRANSYS Electronics Limited |
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1 / 1 page Data Sheet Third Angle Protection µm 420 +/- 20 Symbol Cathode Anode Ti-Ni-Ag Dimensions in mils (mm) (2) The characteristics above assume the die are assembled in industry standard packages using appropriate attach methods. Mechanical Dimensions Wafer Die SCD0976-1 Page 1 of 1 Transys Electronics LTD Email: sales@transyselectronics.com Website: www.transyselectronics.com Tel: + 44 (0) 121 776 6321 Fax: + 44 (0) 121 776 6997 The information in this datasheet does not form part of any contract, quotation guarantee,warranty or representation, it has been produced in good faith and is believed to be accurate and may be changed without notice at anytime. Liability will not be accepted by Transys Electronics LTD for any consequences whatsoever in its use. This publication does not convey nor imply any license under patent or other intellectual/industrial property rights. The products within this specification are not designed for use in any life support apparatus whatsoever where malfunction can be reasonably expected to cause personal injury or death. Customers using these products in the aforementioned applications do so at their own risk and agree to fully indemnify Transys Electronics LTD for any damage/ legal fees either direct, incidental or consequential from this improper use or sale. SB051C020-1-W-Ag Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32V F. 20 VRRM Maximum Repetitive Reverse Voltage (2) Electrical Characteristics @ 25 Reverse Leakage Current @ VR = 20V (2) IR(1) C Volt 800 SB051C020-1-W-Ag (See ordering code below) IF(AV) 1 Typical Average Forward Rectified Current (2) µA Maximum Forward Voltage @ IF = 1A (1)(2) VF Volt 0.32 Amp Symbol Unit Reverse Leakage Current @ VR = 20V, 125OC (2) IR(2) mA Storage Temperature Range (2) TJ -45 to +125 C Junction Operating Temperature Range (2) TSG -45 to +125 C (1) Pulse Width tp = < 300µS, Duty Cycle <2% Cr-Al-Ni-Ag - Suffix "Ag" Wafer Diameter - 100 mm (4") Wafer Thickness 420 +/- 20 Top (Anode) - CR/Ti/Ni/Ag (Suffix "Ag") Bottom (cathode) Ti/Ni/Ag Scribe line Width 80 µM 51.18 (1.300) 40 Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM) Schottky Barrier 65 Mils CR Barrier 40Volt 3 Amp Wafer CR/Ti/Ni/Ag Ordering Code SB065C040-3-W-Ag ESD Machine Model (MM) VESD(mm) Volt >1000 e.g. 43.7 (1.112) 51.18 (1.300) 43.7 (1.112) |
Ähnliche Teilenummer - SB051C020-1-W-AG |
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Ähnliche Beschreibung - SB051C020-1-W-AG |
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