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BF1100 Datenblatt(PDF) 9 Page - NXP Semiconductors

Teilenummer BF1100
Bauteilbeschribung  Dual-gate MOS-FETs
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
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BF1100 Datenblatt(HTML) 9 Page - NXP Semiconductors

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NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
Fig.19 Input admittance as a function of
frequency; typical values.
VDS = 9 V; VG2 =4V.
ID = 10 mA; Tamb =25 °C.
handbook, halfpage
10 3
MLD172
102
10
10 1
10 2
10
1
y is
(mS)
f (MHz)
b is
g is
VDS = 9 V; VG2 =4V.
ID = 10 mA; Tamb =25 °C.
Fig.20 Reverse transfer admittance and phase as
a function of frequency; typical values.
10 3
MLD173
102
10
10 3
10 2
10
1
y rs
10 3
10
10
1
2
(
µS)
f (MHz)
yrs
rs
(deg)
ϕ
rs
ϕ
Fig.21 Forward transfer admittance and phase as
a function of frequency; typical values.
VDS = 9 V; VG2 =4V.
ID = 10 mA; Tamb =25 °C.
10 3
MLD174
102
10
1
10 2
10
1
10
10
2
y fs
(mS)
y fs
f (MHz)
fs
(deg)
ϕ
fs
ϕ
Fig.22 Output admittance as a function of
frequency; typical values.
VDS = 9 V; VG2 =4V.
ID =10 mA; Tamb =25 °C.
handbook, halfpage
10 3
MLD175
102
10
10 1
10
1
10 2
yos
(mS)
f (MHz)
bos
gos
Rev. 02 - 13 November 2007
9 of 15


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