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BF1100 Datenblatt(PDF) 11 Page - NXP Semiconductors |
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BF1100 Datenblatt(HTML) 11 Page - NXP Semiconductors |
11 / 15 page NXP Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R Fig.27 Cross-modulation test set-up. For VGG =VDS = 9 V, RG = 180 kΩ. For VGG =VDS = 12 V, RG = 250 kΩ. handbook, full pagewidth DUT VAGC C1 4.7 nF R1 10 k Ω MGC420 C4 4.7 nF L1 450 nH C3 12 pF R L 50 Ω ≈ VGG VDS RGEN 50 V I R2 50 4.7 nF C2 RG Ω Ω Rev. 02 - 13 November 2007 11 of 15 |
Ähnliche Teilenummer - BF1100 |
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Ähnliche Beschreibung - BF1100 |
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