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2SC2229 Datenblatt(PDF) 4 Page - Toshiba Semiconductor

Teilenummer 2SC2229
Bauteilbeschribung  Silicon NPN Triple Diffused Type (PCT Process)
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2229 Datenblatt(HTML) 4 Page - Toshiba Semiconductor

  2SC2229_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SC2229_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SC2229_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SC2229_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SC2229_06 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SC2229
2006-11-09
4
PC – Ta
Collector-emitter voltage VCE (V)
Safe Operating Area
Ambient temperature Ta (°C)
Collector current IC (mA)
Reverse voltage VR (V)
Cib, Cob – VR
fT – IC
20
0
40
60
100
120
1.2
0.4
0
0.2
0.6
0.8
80
140
160
1.0
30
1
1
5
3
3
f = 1 MHz
Ta = 25°C
Cob (IE = 0)
10
30
100
10
50
Cib (IC = 0)
1
0.5
3
10
30
500
100
10
30
50
100
300
Common emitter
Ta = 25°C
VCE = 30 V
10
2
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
1
3
3
5
10
30
100
30
100
300
IC max (continuous)
IC max (pulsed)*
1 s*
300 ms*
100 ms*
DC operation
10
VCEO
max
200
50


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