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2SC2229 Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer 2SC2229
Bauteilbeschribung  Silicon NPN Triple Diffused Type (PCT Process)
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2229 Datenblatt(HTML) 3 Page - Toshiba Semiconductor

  2SC2229_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SC2229_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SC2229_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SC2229_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SC2229_06 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SC2229
2006-11-09
3
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
1
0
3
10
30
500
100
10
30
50
100
300
Common emitter
Ta = 25°C
VCE = 2 V
10
5
0.5
1
3
30
2
0.3
0.03
1
10
100
Common emitter
IC/IB = 10
Ta = 100°C
25
0
0.5
0.05
0.1
1
0.5
3
30
1000
50
30
100
300
10
100
500
Common emitter
VCE = 5 V
Ta = 100°C
25
0
50
0
0
30
20
10
0.2
0.4
0.6
Common emitter
VCE = 5 V
Ta = 100°C
0.8
25
0
1.0
1.2
1.4
40
0.05
0.5
0.1
0.3
0.5
1
3
10
30
100
3
1
IC/IB = 20
10
5
Common emitter
Ta = 25°C
50
0
0
30
20
10
2
4
6
Common emitter
Ta = 25°C
400
300
IB = 50 μA
1000
8
200
150
100
10
12
14
40
500
IC – VCE
IC – VBE
hFE – IC
hFE – IC
VCE (sat) – IC
VCE (sat) – IC


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