Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SJ669 Datenblatt(PDF) 5 Page - Toshiba Semiconductor |
|
2SJ669 Datenblatt(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SJ669 2006-11-17 5 EAS – Tch Channel temperature (initia) Tch (°C) 0 25 10 30 50 40 50 75 100 125 150 20 rth − tw Pulse width tw (s) Drain −source voltage VDS (V) Safe operating area 0.1 10 100 0.1 10 100 0.001 0.01 1 1 0.001 100 μ 1 m 10 m 100 m 1 10 100 0.01 0.1 1 10 T PDM t Duty = t/T Rth (ch-a) = 104°C/W Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse ID max (Pulsed) * DC operation Ta = 25°C 1 ms * VDSS max 100 μs * *:Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (Continuous) RG = 25 Ω VDD = −25 V, L = 2.2 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Test circuit Waveform IAR BVDSS VDD VDS −15 V 0 V |
Ähnliche Teilenummer - 2SJ669 |
|
Ähnliche Beschreibung - 2SJ669 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |