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TA2160FNG Datenblatt(PDF) 9 Page - Toshiba Semiconductor

Teilenummer TA2160FNG
Bauteilbeschribung  Low Consumption Current Stereo Headphone Amplifier (1.5/3 V use)
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TA2160FNG Datenblatt(HTML) 9 Page - Toshiba Semiconductor

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TA2160FNG
2004-05-11
9
iv
fO and fL
The fL and fO should be set up out of the audio frequency range. In case that the fO and
fL is inside of audio frequency range and AGC circuit operates, the voltage gain decrease.
v
HPF
The fHC should be made 1/2 or less frequency as compared with the fL and fO. The phase
difference is large near the fHC, so that the bass boost level runs short. And the HPF gain
of middle or high frequency range should be set to 10dB or more.
(3)
Treble boost function
This function is realized by using the PW NF terminal. For details, please refer to application note.
3.
Total
(1)
Changeover of power amplifier output DC voltage at 3 V set.
The output DC voltage of the power amplifier is raised by the resistance connected between the RF
OUT terminal and the VREF IN terminal.
In case of 3 V set, the dynamic range spreads.
(2)
Switch
(a) Switch terminal
The current flows through each terminal, in case that these terminals are connected with H
level independently, evevn though the IC off mode.
It is necessary to connect an external pull-down resistor with each terminal in case that IC is
turned on due to external noise etc. The sensitivity of each switch is set up highly.
(b) Pop noise
It is advised to connect R and C with each switch, to reduce the pop noise in switchover (see
Fig.1). It is better that the constants are R = 100 kΩ ,C = 1 µF. As for the constants, select the
optimum one depending on each a set carefully.
0
10 k
0
2
4
6
8
10
12
0.5
1
1.5
2
2.5
VCC = 3 V
VREF
PW OUT
ICCQ
20 k
50 k
100 k
200 k
500 k
1 M
Resistance (PIN 26 – PIN 27)
R
(Ω)
VREF, PW OUT, ICCQ – R
Figure 5
Adjutment of output DC voltage
VCC
R
C
Figure 6
Pop noise


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