Datenblatt-Suchmaschine für elektronische Bauteile |
|
TD62008AFG Datenblatt(PDF) 4 Page - Toshiba Semiconductor |
|
TD62008AFG Datenblatt(HTML) 4 Page - Toshiba Semiconductor |
4 / 10 page TD62008APG/AFG 2007-10-16 4 Test Circuit 1. ICEX 2. VCE (sat) 3. hFE 4. IIN (ON), IIN (OFF) 5. IR 6. VF 7. tON, tOFF Precautions for Use This IC does not include built-in protection circuits for excess current or overvoltage. If this IC is subjected to excess current or overvoltage, it may be destroyed. Hence, the utmost care must be taken when systems which incorporate this IC are designed. Utmost care is necessary in the design of the output line, COMMON and GND line since the IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding. Note 1: Pulse Width 50 μs Duty Cycle 10% Output Impedance 50 Ω tr ≤ 5 ns, tf ≤ 10 ns Note 2: CL includes probe and jig capacitance |
Ähnliche Teilenummer - TD62008AFG |
|
Ähnliche Beschreibung - TD62008AFG |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |