Datenblatt-Suchmaschine für elektronische Bauteile |
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TD62003AF Datenblatt(PDF) 6 Page - Toshiba Semiconductor |
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TD62003AF Datenblatt(HTML) 6 Page - Toshiba Semiconductor |
6 / 15 page TD62001~004AP/AF 2006-06-13 6 8. tON, tOFF Note 1: Pulse width 50 µs, duty cycle 10% Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Note 2: Input conditions are shown as following: Input Condition Type Number R1 VIH TD62001AP/AF 2.7 k Ω 3 V TD62002AP/AF 0 13 V TD62003AP/AF 0 3 V TD62004AP/AF 0 8 V Note 3: CL includes probe and jig capacitance. Precautions for Using This IC does not include built-in protection circuits for excess current or overvoltage. If this IC is subjected to excess current or overvoltage, it may be destroyed. Hence, the utmost care must be taken when systems which incorporate this IC are designed. Utmost care is necessary in the design of the output line, COMMON and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding. |
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