Ultra-Fast-Recovery Rectifier Diode

FMXJ-2164S

September, 2005

D01-001EA-050912

Die-Structure : Silicone-Planer-Diode by Diffusion

§1.

Absolute maximum ratings & Electrical characteristics

1-1 Absolute maximum ratings

No.

Item

Symbol

Unit

Rating

Conditions

1

Transient Peak Reverse Voltage

VRSM

V

400

2

Peak Reverse Voltage

VRM

V

400

3

Average Forward Current

IF(AV)

A

16

Refer to Derating of 5

4

Peak Surge Forward Current

IFSM

A

100

10msec. Half sinewave, one shot

5

50

1msec

6

Junction Temperature

Tj

°C

-40 ~ +150

7

Storage Temperature

Tstg

°C

-40 ~ +150

No.1,2,4&5 show ratings per one chip

1-2 Electrical characteristics (Ta=25°C ,unless otherwise specified)

No.

Item

Symbol

Unit

Rating

Conditions

1

Forward Voltage Drop

VF

V

1.40 max.

IF=8.0A

2

Reverse Leakage Current

IR

μA

100 max.

VR=VRM

3

Reverse Leakage Current Under

High Temperature

H·IR

mA

20 max.

VR=VRM, Tj=150°C

4

Reverse Recovery Time

trr

ns

18

max.

IF=IRP=500mA

5

Thermal Resistance

Rth(j-c)

°C/W

4.0 max.

Between Junction and case

No.1,2&3 show characteristics per one chip.

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