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BTA41 Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer BTA41
Bauteilbeschribung  40A TRIACs
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTA41 Datenblatt(HTML) 2 Page - STMicroelectronics

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BTA40, BTA41 and BTB41 Series
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Table 3: Absolute Maximum Ratings
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Table 5: Static Characteristics
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(full sine wave)
RD91 / TOP3
Tc = 95°C
40
A
TOP Ins.
Tc = 80°C
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz
t = 20 ms
400
A
F = 60 Hz
t = 16.7 ms
420
I²tI²t Value for fusing
tp = 10 ms
880
A²s
dI/dt
Critical rate of rise of on-state cur-
rent IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 125°C
50
A/µs
VDSM/VRSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25°C
VDSM/VRSM
+ 100
V
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
8A
PG(AV)
Average gate power dissipation
Tj = 125°C
1W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Symbol
Test Conditions
Quadrant
Value
Unit
IGT (1)
VD = 12 V
RL = 33 Ω
I - II - III
IV
MAX.
50
100
mA
VGT
ALL
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ Tj = 125°C
ALL
MIN.
0.2
V
IH (2)
IT = 500 mA
MAX.
80
mA
IL
IG = 1.2 IGT
I - III - IV
MAX.
70
mA
II
160
dV/dt (2)
VD = 67 %VDRM gate open
Tj = 125°C
MIN.
500
V/µs
(dV/dt)c (2) (dI/dt)c = 20 A/ms
Tj = 125°C
MIN.
10
V/µs
Symbol
Test Conditions
Value
Unit
VT (2)
ITM = 60 A
tp = 380 µs
Tj = 25°C
MAX.
1.55
V
Vt0 (2)
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd (2)
Dynamic resistance
Tj = 125°C
MAX.
10
m
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
MAX.
5µA
Tj = 125°C
5mA
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.


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