Datenblatt-Suchmaschine für elektronische Bauteile |
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BTB16-800B Datenblatt(PDF) 3 Page - STMicroelectronics |
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BTB16-800B Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 5 page Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig.4 : RMS on-state current versus case temperature. 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 0.01 0.1 1 Zth/Rth Zt h( j-c ) Zt h(j-a) tp( s) Fig.5 : Relative variation of thermal impedance versus pulse duration. Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). BTA16 B / BTB16 B 3/5 |
Ähnliche Teilenummer - BTB16-800B |
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Ähnliche Beschreibung - BTB16-800B |
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