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BY253 Datenblatt(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

Teilenummer BY253
Bauteilbeschribung  PLASTIC SILICON RECTIFIER
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Hersteller  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

BY253 Datenblatt(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited

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GALAXY ELECTRICAL
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
MECHANICAL DATA
Case:JEDEC DO-27,molded plas tic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces, 1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unles s otherwis e specified.
Single phase,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%.
BY
253
BY
254
BY
255
UNITS
Maximum recurrent peak reverse voltage
VRRM
600
800
1300
V
Maximum RMS voltage
VRMS
420
560
910
V
Maximum DC blocking voltage
VDC
600
800
1300
V
Maximum average forw ard rectified current
9.5mm lead length,
@T
A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J=125
Maximum instantaneous forw ard voltage
@ 3.0 A
VF
V
Maximum reverse current
@T
A=25
at rated DC blocking voltage
@T
A=100
Typical junction capacitance
(Note1)
CJ
p F
Typical thermal resistance
(Note2)
RθJA
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
35
BY
251
BY
252
200
400
1.1
20
2. Thermal resistance f rom junction to ambient.
A
BY251(Z)---BY255(Z)
A
10.0
and similar s olvents
IF(AV)
3.0
PLASTIC SILICON RECTIFIER
The plastic material carries U/L recognition 94V-0
A
100.0
100.0
IFSM
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
- 55 ---- + 150
- 55 ---- + 150
IR
400
280
VOLTAGE RANGE: 200 --- 1300 V
CURRENT: 3.0 A
140
200
Diffused junction
Easily cleaned witn Freon,Alcohol,ls opropanol
DO - 27
www.galaxycn.com
BL
BLGALAXY ELECTRICAL
Document Number 0260014
1.


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