Datenblatt-Suchmaschine für elektronische Bauteile |
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ES1D Datenblatt(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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ES1D Datenblatt(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 2 page TJ=25 1 2 4 6 10 20 40 60 100 200 0.1 0.2 0.4 1 2 4 10 40 100 20 www.galaxycn.com Document Number 0280026 2. BLGALAXY ELECTRICAL NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . RATINGS AND CHARACTERISTIC CURVES INSTANTANEOUS FORWARD VOLTAGE, VOLTS ES1A --- ES1G FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC SET TIME BASE FOR 10/15 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS PULSE GENERATOR (NOTE2) D.U.T. 1 NONIN- DUCTIVE 50 N 1. 10 N1. OSCILLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) -1.0A -0.25A 0 +0.5A trr 1cm 01.0 1.8 Pulse width=300 s 1% Duty Cycle TJ=25 0.4 0.8 100 10 1.0 0.1 0.01 0 30 110 100 5 8.3ms Single Half Sine-Wave 50 0.5 1 0 25 50 75 100 125 150 Single Phase Half Wave 60HZ Resistive or Inductive Load 0 175 15 |
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Ähnliche Beschreibung - ES1D |
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