Datenblatt-Suchmaschine für elektronische Bauteile |
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SPI07N60S5 Datenblatt(PDF) 1 Page - Infineon Technologies AG |
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SPI07N60S5 Datenblatt(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page 1 2002-07-26 SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data Cool MOS™ Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity Product Summary VDS @ Tjmax 650 V RDS(on) 0.6 Ω ID 7.3 A P-TO262 P-TO263-3-2 P-TO220-3-1 G,1 D,2 S,3 Marking 07N60S5 07N60S5 07N60S5 Type Package Ordering Code SPP07N60S5 P-TO220-3-1 Q67040-S4172 SPB07N60S5 P-TO263-3-2 Q67040-S4185 SPI07N60S5 P-TO262 Q67040-S4328 Maximum Ratings, at Tc = 25°C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID 7.3 4.6 A Pulsed drain current 1) TC=25°C ID puls 14.6 Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V EAS 230 mJ Avalanche energy (repetitive, limited by Tjmax) ID = 7.3 A , VDD = 50 V EAR 0.5 Avalanche current (repetitive, limited by Tjmax) IAR 7.3 A Reverse diode dv/dt IS=7.3A, VDS<VDSS, di/dt=100A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 83 W Operating and storage temperature Tj , Tstg -55... +150 °C |
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