Datenblatt-Suchmaschine für elektronische Bauteile |
|
STP10NM65N Datenblatt(PDF) 5 Page - STMicroelectronics |
|
STP10NM65N Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 17 page STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Electrical characteristics 5/17 Table 7. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 325 V, ID = 4.5 A RG =4.7 Ω VGS = 10 V (see Figure 18) 12 8 50 20 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 9 36 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 9 A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) 330 3 19 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 20) 430 4 19 ns µC A |
Ähnliche Teilenummer - STP10NM65N |
|
Ähnliche Beschreibung - STP10NM65N |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |