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BTA35 Datenblatt(PDF) 1 Page - Sirectifier Semiconductors

Teilenummer BTA35
Bauteilbeschribung  Discrete Triacs(Non-Isolated/Isolated)
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Hersteller  SIRECTIFIER [Sirectifier Semiconductors]
Direct Link  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

BTA35 Datenblatt(HTML) 1 Page - Sirectifier Semiconductors

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BTB/BTA35
Discrete Triacs(Non-Isolated/Isolated)
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine wave)
TO-247AD
Tc = 80 °C
35
A
ITSM
Non repetit
ive surge peak on-state
current (full cycle
, Tj initial = 25°C)
F = 60 Hz
t = 16.7 ms
400
A
F = 50 Hz
t = 20 ms
335
I²t
I²
t Value for fusing
tp = 10 ms
664
A²s
dI/dt
Critical rate of rise of on-state current
IG = 2 x I GT , tr < 100 ns
F = 120 Hz
Tj = 125
°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
4
A
PG(AV)
Average gate p ower diss ipation
Tj = 125
°C
1
W
Tstg
Tj
Storage junction tempe
rature range
Operating junction temperature
range
- 4
0 to + 150
- 40 to + 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Unit
IGT (1)
VD = 12 V
RL = 33
I - II - III
MAX.
mA
VGT
ALL
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 k
Tj = 125°C
ALL
MIN.
0.2
V
IH (2)
IT = 500 mA
MAX.
mA
IL
IG = 1.2 IGT
I- III-IV
MAX.
mA
II
dV/dt (2)
VD = 67 % VDRM gate open Tj = 125°C
MIN.
V/µs
(dI/dt)c (2) Without snubber
Tj = 125°C
MIN.
A/ms
G
T2
T1
Symbol
_
VDSM/VRSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25°C
VDRM/VRRM
+ 100
V
Dimensions TO-247AD
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780
0.800
B
20.80 21.46
0.819
0.845
C
15.75 16.26
0.610
0.640
D
3.55
3.65
0.140
0.144
E
4.32
5.49
0.170
0.216
F
5.4
6.2
0.212
0.244
G
1.65
2.13
0.065
0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040
0.055
K
10.8
11.0
0.426
0.433
L
4.7
5.3
0.185
0.209
M
0.4
0.8
0.016
0.031
N
1.5
2.49
0.087
0.102
T2
T1
G
IV
Value
50
100
120
70
120
500
10


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