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BTA26 Datenblatt(PDF) 1 Page - Sirectifier Semiconductors

Teilenummer BTA26
Bauteilbeschribung  Discrete Triacs(Non-Isolated/Isolated)
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Hersteller  SIRECTIFIER [Sirectifier Semiconductors]
Direct Link  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

BTA26 Datenblatt(HTML) 1 Page - Sirectifier Semiconductors

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BTB/BTA26
Discrete Triacs(Non-Isolated/Isolated)
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine wave)
TO-220AB
Tc = 100°C
25
A
ITSM
Non repetit
ive surge peak on-state
current (full cycle
, Tj initial = 25°C)
F = 60 Hz
t = 16.7 ms
260
A
F = 50 Hz
t = 20 ms
250
I²t
I²
t Value for fusing
tp = 10 ms
340
A²s
dI/dt
Critical rate of rise of on-state current
IG = 2 x I GT , tr < 100 ns
F = 120 Hz
Tj = 125
°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
4
A
PG(AV)
Average gate p ower diss ipation
Tj = 125
°C
1
W
Tstg
Tj
Storage junction tempe
rature range
Operating junction temperature
range
- 4
0 to + 150
- 40 to + 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB
Unit
CW
BW
IGT (1)
VD = 12 V
RL = 33
I - II - III
MAX.
35
50
mA
VGT
I - II - III
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 k
Tj = 125°C
I - II - III
MIN.
0.2
V
IH (2)
IT = 500 mA
MAX.
50
75
mA
IL
IG = 1.2 IGT
I - III
MAX.
70
80
mA
II
80
100
dV/dt (2)
VD = 67 % VDRM gate open Tj = 125°C
MIN.
500
1000
V/µs
(dI/dt)c (2) Without snubber
Tj = 125°C
MIN.
22
A/ms
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min.
Max.
12.70
13.97
14.73
16.00
9.91
10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Inches
Min.
Max.
0.500
0.550
0.580
0.630
0.390
0.420
0.139
0.161
0.230
0.270
0.100
0.125
0.045
0.065
0.110
0.230
0.025
0.040
0.100
BSC
0.170
0.190
0.045
0.055
0.014
0.022
0.090
0.110
Dimensions TO-220AB
G
T2
T1
T2
T1
G
Symbol
13
_
VDSM/VRSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25°C
VDRM/VRRM
+ 100
V


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