Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF1018EPBF Datenblatt(PDF) 3 Page - International Rectifier |
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IRF1018EPBF Datenblatt(HTML) 3 Page - International Rectifier |
3 / 11 page IRF1018E/S/SLPbF www.irf.com 3 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature Fig 2. Typical Output Characteristics Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V ≤60μs PULSE WIDTH Tj = 25°C 4.5V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V ≤60μs PULSE WIDTH Tj = 175°C 4.5V 2 3 4 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) 0.1 1 10 100 1000 TJ = 25°C TJ = 175°C VDS = 25V ≤60μs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 ID = 47A VGS = 10V 1 10 100 VDS, Drain-to-Source Voltage (V) 0 1000 2000 3000 4000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 10203040 5060 QG Total Gate Charge (nC) 0 4 8 12 16 VDS= 48V VDS= 30V VDS= 12V ID= 47A |
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