STB75NE75 datasheet(3/8 Pages) STMICROELECTRONICS

Teilenummer	STB75NE75

Bauteilbeschribung	N - CHANNEL 75V - 0.01 ohm - 75A - D2PAK STripFET] POWER MOSFET

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay T ime

Rise Time

VDD =40 V

ID =40 A

RG =4.7

Ω

VGS =10 V

(Resistive Load, see fig. 3)

32

130

ns

Qg

Q gs

Qgd

Tot al G ate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD =60 V ID =75 A VGS = 10 V

150

30

62

200

nC

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay T ime

Fall T ime

VDD =40 V

ID =40 A

RG =4.7

Ω

VGS =10 V

(Resistive Load, see fig. 3)

150

45

ns

tr(Voff)

tf

tc

Off -volt age Rise T ime

Fall T ime

Cross-over Time

Vclamp =60 V

ID =75 A

RG =4.7

Ω

VGS =4.5 V

(Induct ive Load, see fig. 5)

35

60

100

ns

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

75

300

A

VSD (

∗)Forward On Voltage

ISD =75 A

VGS =0

1. 5

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 75 A

di/dt = 100 A/

µs

VDD =30 V

Tj =150

oC

(see t est circuit, f ig. 5)

130

0.6

9

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

STB75NE75

3/8

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