Datenblatt-Suchmaschine für elektronische Bauteile |
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TP23753 Datenblatt(PDF) 4 Page - Texas Instruments |
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TP23753 Datenblatt(HTML) 4 Page - Texas Instruments |
4 / 27 page ELECTRICAL CHARACTERISTICS TPS23753 SLVS853A – JUNE 2008 – REVISED JUNE 2008.............................................................................................................................................................. www.ti.com ELECTRICAL CHARACTERISTICS (continued) Unless otherwise noted: CS = APD = CTL = RTN, GATE open, RFRS = 60.4 kΩ, RBLNK = 249 kΩ, CVB = CVC = 0.1 µF, RDEN = 24.9 k Ω, RCLS open, VVDD-VSS = 48 V, VVDD1-RTN = 48 V, 8.5 V ≤ VVC-RTN ≤ 18 V, –40°C ≤ TJ ≤ 125°C Controller Section Only [VSS = RTN and VDD = VDD1] or [VSS = RTN = VDD], all voltages referred to RTN. Typical specifications are at 25°C. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT GATE Source current VCTL = VB, VC = 12 V, GATE high, Pulsed measurement 0.30 0.46 0.60 A Sink current VCTL = VB, VC = 12 V, GATE low, Pulsed measurement 0.50 0.79 1.1 A APD VAPDEN VAPD↑ 1.42 1.5 1.58 Threshold voltage V VAPDH Hysteresis(2) 0.28 0.3 0.32 THERMAL SHUTDOWN Turn off temperature 135 145 155 °C Hysteresis(3) 20 °C (2) The hysteresis tolerance tracks the rising threshold for a given device. (3) These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's product warranty. PoE and Control [VDD = VDD1] or [VDD1] = RTN, VVC-RTN = 0 V, all voltages referred to VSS. Typical specifications are at 25°C. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DEN (DETECTION) (VDD = VDD1 = RTN = VSUPPLY positive) Measure ISUPPLY Detection current VDD = 1.6 V 62 64.3 66.5 µA VDD = 10 V 399 406 413 Detection bias current VDD = 10 V, DEN open, Measure ISUPPLY 5.2 12 µA VPD_DIS Hotswap disable threshold 3 4 5 V Ilkg DEN leakage current VDEN = VDD = 57 V, Float VDD1 and RTN, Measure IDEN 0.1 5 µA CLS (CLASSIFICATION) (VDD = VDD1 = RTN = VSUPPLY positive) 13 V ≤ VDD ≤ 21 V, Measure ISUPPLY RCLS = 1270 Ω 1.8 2.14 2.4 RCLS = 243 Ω 9.9 10.6 11.3 ICLS Classification current mA RCLS = 137 Ω 17.6 18.6 19.4 RCLS = 90.9 Ω 26.5 27.9 29.3 RCLS = 63.4 Ω 38 39.9 42 VCL_ON Regulator turns on, VDD rising 10 11.7 13 Classification regulator lower V threshold VCL_HYS Hysteresis(1) 1.9 2.05 2.2 VCU_OFF Regulator turns off, VDD rising 21 22 23 Classification regulator upper V threshold VCU_HYS Hysteresis(1) 0.5 0.77 1 Ilkg Leakage current VDD = 57 V, VCLS = 0 V, DEN = VSS, Measure ICLS 1 µA RTN (PASS DEVICE) (VDD1 = RTN) On resistance 0.7 1.2 Ω Current limit VRTN = 1.5 V, VDD = 48 V, Pulsed Measurement 405 450 505 mA Inrush limit VRTN = 2 V, VDD: 0 V → 48 V, Pulsed Measurement 100 140 180 mA Foldback voltage threshold VDD rising 11 12.3 13.6 V Ilkg Leakage current VDD = VRTN = 100 V, DEN = VSS 40 µA UVLO UVLO_R VDD rising 33.9 35 36.1 Undervoltage lockout threshold V UVLO_H Hysteresis (1) 4.40 4.55 4.70 (1) The hysteresis tolerance tracks the rising threshold for a given device. 4 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated Product Folder Link(s): TPS23753 |
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