Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

Preview PDF HTML

STP10NA40FI Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STP10NA40FI
Bauteilbeschribung  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP10NA40FI Datenblatt(HTML) 3 Page - STMicroelectronics

  STP10NA40FI Datasheet HTML 1Page - STMicroelectronics STP10NA40FI Datasheet HTML 2Page - STMicroelectronics STP10NA40FI Datasheet HTML 3Page - STMicroelectronics STP10NA40FI Datasheet HTML 4Page - STMicroelectronics STP10NA40FI Datasheet HTML 5Page - STMicroelectronics STP10NA40FI Datasheet HTML 6Page - STMicroelectronics STP10NA40FI Datasheet HTML 7Page - STMicroelectronics STP10NA40FI Datasheet HTML 8Page - STMicroelectronics STP10NA40FI Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 10 page
background image
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =200 V
ID =5 A
RG =47
Ω
VGS =10 V
(see test circuit, figure 3)
35
115
50
155
ns
ns
(di/dt) on
Turn-on Current Slope
VDD =320 V
ID =10 A
RG =47
Ω
VGS =10 V
(see test circuit, figure 5)
250
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 320 V
ID =10 A
VGS =10 V
54
8
27
75
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =320 V
ID =10 A
RG =47
Ω VGS =10 V
(see test circuit, figure 5)
75
30
120
105
45
160
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
I SDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
10
40
A
A
VSD (
∗)
Forward On Volt age
ISD =10 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 10 A
di/dt = 100 A/
µs
VDD = 100 V
Tj =150
oC
(see test circuit, figure 5)
470
6.5
27.5
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Areas for TO-220
Safe Operating Areas for ISOWATT220
STP10NA40/FI
3/10


Ähnliche Teilenummer - STP10NA40FI

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
SamHop Microelectronics...		 STP10N03 SAMHOP-STP10N03 Datasheet
105Kb / 8P		    N-Channel Logic Level Enhancement Mode Field Effect Transistor
logo
STMicroelectronics		 STP10N105K5 STMICROELECTRONICS-STP10N105K5 Datasheet
724Kb / 18P		    Ultra low gate charge
October 2014 Rev 2
STP10N60M2 STMICROELECTRONICS-STP10N60M2 Datasheet
1Mb / 24P		    N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK
logo
VBsemi Electronics Co.,...		 STP10N60M2 VBSEMI-STP10N60M2 Datasheet
1Mb / 10P		    N-Channel 650V (D-S) Power MOSFET
logo
STMicroelectronics		 STP10N62K3 STMICROELECTRONICS-STP10N62K3 Datasheet
954Kb / 17P		    N-channel 620 V, 0.68 廓 typ., 8.4 A SuperMESH3?
More results

Ähnliche Beschreibung - STP10NA40FI

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
STMicroelectronics		 STD4NA40 STMICROELECTRONICS-STD4NA40 Datasheet
169Kb / 10P		    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STE40NA60 STMICROELECTRONICS-STE40NA60 Datasheet
46Kb / 5P		    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP4NA40 STMICROELECTRONICS-STP4NA40 Datasheet
198Kb / 10P		    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP4NA60 STMICROELECTRONICS-STP4NA60 Datasheet
203Kb / 10P		    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STB3NA60-1 STMICROELECTRONICS-STB3NA60-1 Datasheet
115Kb / 9P		    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP4NA90 STMICROELECTRONICS-STP4NA90 Datasheet
236Kb / 5P		    N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP6NA60 STMICROELECTRONICS-STP6NA60 Datasheet
206Kb / 10P		    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STU10NA50 STMICROELECTRONICS-STU10NA50 Datasheet
73Kb / 5P		    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP3NA60 STMICROELECTRONICS-STP3NA60 Datasheet
201Kb / 10P		    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
logo
New Jersey Semi-Conduct...		 STP6NA80 NJSEMI-STP6NA80 Datasheet
153Kb / 3P		    N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STH7NA80FI NJSEMI-STH7NA80FI Datasheet
154Kb / 3P		    N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com