STP20N10L datasheet(3/10 Pages) STMICROELECTRONICS

Teilenummer	STP20N10L

Bauteilbeschribung	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD =30 V

ID =10 A

RG =50

Ω

VGS =5 V

(see test circuit, figure 3)

50

140

70

200

ns

(di/dt) on

Turn-on Current Slope

VDD =80 V

ID =20 A

RG =50

Ω

VGS =5 V

(see test circuit, figure 5)

140

A/

µs

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =80 V

ID =20 A

VGS =5 V

22

6

12

30

nC

SWITCHING OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Of f-voltage Rise Time

Fall Time

Cross-over Time

VDD =80 V

ID =20 A

RG =50

Ω

VGS =5 V

(see test circuit, figure 5)

80

160

110

220

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

ISD

I SDM(

•)

Source-drain Current

(pulsed)

20

80

A

VSD (

∗)

Forward On Volt age

ISD =20 A

VGS =0

1.5

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 20 A

di/dt = 100 A/

µs

VDD =50 V

Tj =150

oC

(see test circuit, figure 5)

130

0.4

6

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Areas For TO-220

Safe Operating Areas For ISOWATT220

STP20N10L/FI

3/10

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