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TYNX12RG Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer TYNX12RG
Bauteilbeschribung  Sensitive and Standard 12 A SCRS
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TYNX12RG Datenblatt(HTML) 4 Page - STMicroelectronics

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Characteristics
TN12, TS12 and TYNx12 Series
4/12
Figure 3.
Average and D.C. on-state current
versus ambient temperature
(device mounted on FR4 with
recommended pad layout) (DPAK)
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
(A)
T(AV)
T
(°C)
amb
α = 180°
D.C.
DPAK
2
DPAK
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
K=[Z
/R
th(j-c)
th(j-c)]
t (s)
p
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
(recommended pad layout, FR4 PC
board for DPAK)
Figure 6.
Relative variation of gate trigger
current and holding current versus
junction temperature for TS12
series
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
K=[Z
/R
th(j-a)
th(j-a)]
t (s)
p
DPAK
TO-220AB / IPAK
DPAK
2
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T (°C)
j
I,I ,I [T ] /
GTHL
j
I
,I ,I [T =25°C]
GT H L
j
IGT
IH & I
R
= 1k
L
GK
Ω
Figure 7.
Relative variation of gate trigger
current and holding current versus
junction temperature for TN12 and
TYNx12 series
Figure 8.
Relative variation of holding
current versus gate-cathode
resistance (typical values) for TS12
series
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I,I ,I [T ] /
GT H L
j
I
,I ,I [T =25°C]
GT H L
j
T (°C)
j
IGT
IH & IL
1E-2
1E-1
1E+0
1E+1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
R(k )
GK
Ω
I [R
] / I [
=1k ]
HGK
H
Ω
RGK
Tj = 25°C


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