STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

2/13

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Value

Unit

STP7NC80Z

STB7NC80Z

STB7NC80Z-1

STP7NC80ZFP

800

V

800

V

Gate- source Voltage

±25

V

6.5

6.5 (*)

A

4

4(*)

A

Drain Current (pulsed)

26

26 (*)

A

135

40

W

Derating Factor

1.08

0.32

W/°C

Gate-source Current

±50

mA

Gate source ESD(HBM-C=100pF, R=1.5K

Ω)

3KV

dv/dt

Peak Diode Recovery voltage slope

3

V/ns

Insulation Withstand Voltage (DC)

--

2000

V

Storage Temperature

-65 to 150

°C

Max.Operating Junction Temperature

150

°C

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

0.93

3.13

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

30

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

6.5

A

Single Pulse Avalanche Energy

290

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

25

V

αT

Voltage Thermal Coefficient

T=25°C Note(3)

1.3

Rz

Dynamic Resistance

90

Ω