STD7NK40Z datasheet(2/13 Pages) STMICROELECTRONICS

Teilenummer	STD7NK40Z

Bauteilbeschribung	N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

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2 / 13 page

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1

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ABSOLUTE MAXIMUM RATINGS

(

l) Pulse width limited by safe operating area

(1) ISD ≤5.4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Value

Unit

STP7NK40Z

STP7NK40ZFP

STD7NK40Z

STD7NK40Z-1

VDS

Drain-source Voltage (VGS = 0)

400

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

400

V

VGS

Gate- source Voltage

± 30

V

ID

Drain Current (continuous) at TC = 25°C

5.4

5.4 (*)

5.4

A

ID

Drain Current (continuous) at TC = 100°C

3.4

3.4 (*)

3.4

A

IDM (l)

Drain Current (pulsed)

21.6

21.6 (*)

21.6

A

PTOT

Total Dissipation at TC = 25°C

70

25

70

W

Derating Factor

0.56

0.2

0.56

W/°C

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5K

Ω)

3000

V

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2500

-

V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220

TO-220FP

DPAK

IPAK

Rthj-case

Thermal Resistance Junction-case Max

1.78

5

1.78

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

100

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

5.4

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

130

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVGSO

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

30

V

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