Datenblatt-Suchmaschine für elektronische Bauteile |
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FDD5N50 Datenblatt(PDF) 3 Page - Fairchild Semiconductor |
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FDD5N50 Datenblatt(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDD5N50 Rev. A www.fairchildsemi.com 3 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 0.1 1 10 0.1 1 10 30 0.04 *Notes: 1. 250µs Pulse Test 2. TC = 25 o C VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V VDS,Drain-Source Voltage[V] 20 45 67 8 0.1 1 10 -55 o C 150 o C *Notes: 1. VDS = 20V 2. 250µs Pulse Test 25 o C VGS,Gate-Source Voltage[V] 20 03 69 12 1.0 1.5 2.0 2.5 3.0 *Note: TJ = 25 o C VGS = 20V VGS = 10V ID, Drain Current [A] 0.40.8 1.21.6 1 10 *Notes: 1. V GS = 0V 2. 250µs Pulse Test 150 o C V SD, Body Diode Forward Voltage [V] 25 o C 70 0.1 1 10 0 250 500 750 1000 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz Crss VDS, Drain-Source Voltage [V] 30 048 12 0 2 4 6 8 10 *Note: ID = 5A VDS = 100V VDS = 250V VDS = 400V Qg, Total Gate Charge [nC] |
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