tm

December 2006

©2006 Fairchild Semiconductor Corporation

FDZ191P Rev.F1 (W)

www.fairchildsemi.com

1

FDZ191P

-20V, -1A, 85m

Ω

Features

area of 2 x 2 BGA

Ultra-thin package: less than 0.65 mm height when mounted

to PCB

RoHS Compliant

General Description

Designed on Fairchild's advanced 1.5V PowerTrench process

with state of the art "low pitch" WLCSP packaging process, the

WLCSP MOSFET embodies a breakthrough in packaging

technology which enables the device to combine excellent

thermal transfer characteristics, ultra-low profile packaging, low

Application

Battery management

Load switch

Battery protection

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

-20

V

Gate to Source Voltage

±8

V

Drain Current

-Continuous

(Note 1a)

-3

A

-Pulsed

-15

Power Dissipation

(Note 1a)

1.5

W

Power Dissipation

(Note 1b)

0.9

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Ambient

(Note 1a)

83

°C/W

Thermal Resistance, Junction to Ambient

(Note 1b)

140

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

1

FDZ191P

WL-CSP

7’’

8mm

5000 units

PIN 1

D

S

S

D

S

G

BOTTOM

TOP

PIN 1

S

D

G