Datenblatt-Suchmaschine für elektronische Bauteile |
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FQD3N50CTM Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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FQD3N50CTM Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page 4 www.fairchildsemi.com FQD3N50C / FQU3N50C Rev. B Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : 1. V GS = 0 V 2. I D = 250µA T J , Junction Temperature [°C] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : 1. V GS = 10 V 2. I D = 1.5 A T J , Junction Temperature [°C] 25 50 75 100 125 150 0 1 2 3 T C , Case Temperature [°C] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 µs 100 ms 1 ms DC 10 ms Operation in This Area is Limited by R DS(on) Notes : 1. T C = 25°C 2. T J = 150°C 3. Single Pulse V DS , Drain-Source Voltage [V] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 No te s : 1 . Z θ JC (t) = 3 .5 °C/W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P DM * Z θJC (t) single pulse D= 0 .5 0.02 0.2 0.05 0.1 0.01 t 1 , S q uare W a ve P u ls e D u ra tion [s ec ] t1 PDM t2 |
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