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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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1SS86 Datenblatt(PDF) 2 Page - Renesas Technology Corp |
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1SS86 Datenblatt(HTML) 2 Page - Renesas Technology Corp |
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2 / 5 page  1SS86 Rev.3.00 May 09, 2005 page 2 of 4 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Reverse voltage VR 3 V Average rectified current IO 30 mA Power dissipation Pd 150 mW Junction temperature Tj 100 °C Storage temperature Tstg −55 to +100 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Forward current IF 8 — — mA VF = 0.5 V Reverse current IR — — 50 µA VR = 0.5 V Reverse voltage VR 3.0 — — V IR = 1 mA Capacitance C — — 0.85 pF VR = 0.5 V, f = 1 MHz ESD-Capability * — 30 — — V C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Note : Failure criterion ; I R > 50 µA at VR = 0.5 V |
Ähnliche Teilenummer - 1SS86 |
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Ähnliche Beschreibung - 1SS86 |
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