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2SA1052 Datenblatt(PDF) 3 Page - Renesas Technology Corp

Teilenummer 2SA1052
Bauteilbeschribung  Silicon PNP Epitaxial
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SA1052 Datenblatt(HTML) 3 Page - Renesas Technology Corp

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2SA1052
Rev.3.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
100
200
300
50
Ambient Temperature Ta (°C)
Maximum Collector Dissipation Curve
100
150
0
–1
–2
–3
–4
–5
–0.2
–0.4
Collector Emitter Voltage VCE (V)
Typical Output Characteristics (1)
–0.6
–0.8
–1.0
IB = 0
–5
µA
–10
–15
–20
–25
–25
0
–1
–2
–3
–4
–5
–5
–10
Collector Emitter Voltage VCE (V)
Typical Output Characteristics (2)
–15
–20
–25
IB = 0
–5
µA
–10
–15
–20
0
–1
–2
–3
–4
–5
–0.2
–0.4
Base to Emitter Voltage VBE (V)
Typical Transfer Characteristics
–0.6
–0.8
–1.0
VCE = –12 V
0
100
200
300
400
500
–0.1
–0.01
–1.0
Collector Current IC (mA)
DC Current Transfer Ratio vs.
Collector Current
–10
–100
VCE = –12 V
0
100
200
300
400
500
–1.0
–0.5
–2
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
–5
–10
–20
VCE = –12 V


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