Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2309DTZ-E Datenblatt(PDF) 2 Page - Renesas Technology Corp |
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2SC2309DTZ-E Datenblatt(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SC2309 Rev.2.00 Aug 10, 2005 page 2 of 6 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 55 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 50 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 10 µA, IC = 0 Collector cutoff current ICBO — — 0.5 µA VCB = 18 V, IE = 0 Emitter cutoff current IEBO — — 0.5 µA VEB = 2 V, IC = 0 DC current transfer ratio hFE 250 — 500 VCE = 12 V, IC = 2 mA Base to emitter voltage VBE — — 0.75 V VCE = 12 V, IC = 2 mA Collector to emitter saturation voltage VCE(sat) — — 0.2 V IC = 10 mA, IB = 1 mA Gain bandwidth product fT — 230 — MHz VCE = 12 V, IC = 2 mA Collector output capacitance Cob — 1.8 3.5 pF VCB = 10 V, IE = 0, f = 1 MHz |
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