2SK1167 datasheet(3/7 Pages) RENESAS

Teilenummer	2SK1167

Bauteilbeschribung	Silicon N Channel MOS FET

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Hersteller	RENESAS [Renesas Technology Corp]

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2SK1167, 2SK1168

Rev.2.00 Sep 07, 2005 page 3 of 6

Main Characteristics

Power vs. Temperature Derating

150

100

50

0

50

100

150

Case Temperature TC (°C)

Maximum Safe Operation Area

100

30

10

3

0.1

1

3

10

30

100

300

1,000

Drain to Source Voltage VDS (V)

1.0

0.3

Operation in this area

is limited by RDS (on)

1 ms

10

µs

100

µs

Ta= 25

°C

PW

=

10

ms

(1

S

hot)

DC

Opera

tion

(T

C =

25

°C)

2SK1168

2SK1167

Typical Output Characteristics

20

12

8

4

0

4

8

12

20

Drain to Source Voltage VDS (V)

6 V

16

VGS = 4 V

Pulse Test

4.5 V

5.0 V

5.5 V

10 V

Typical Transfer Characteristics

20

16

8

4

0

24

6

8

10

Gate to Source Voltage VGS (V)

12

TC = 25°C

75

°C

–25

°C

VDS = 20 V

Pulse Test

10

8

4

2

0

4

8

12

16

20

6

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Pulse Test

10 A

ID = 5 A

20 A

5

2

1.0

0.5

0.05

1

2

5

20

50

100

Drain Current ID (A)

0.1

0.2

Pulse Test

10

VGS = 10 V

15 V

Static Drain to Source on State

Resistance vs. Drain Current

Ähnliche Beschreibung - 2SK1167

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	2SK1328	33Kb / 6P	Silicon N-Channel MOS FET
	2SK1526	50Kb / 9P	Silicon N-Channel MOS FET
	2SK619	35Kb / 1P	SILICON N-CHANNEL MOS FET
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Ähnliche Teilenummer - 2SK1167

Ähnliche Beschreibung - 2SK1167

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