Datenblatt-Suchmaschine für elektronische Bauteile |
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STPS80H100TV Datenblatt(PDF) 3 Page - STMicroelectronics |
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STPS80H100TV Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 4 page 1E-3 1E-2 1E-1 1E+0 0 100 200 300 400 500 t(s) IM(A) IM t δ=0.5 Tc=50 °C Tc=75 °C Tc=110 °C Fig. 3: Non repetitive surge peak forward current versusoverloadduration(maximum values, perdiode). 0 102030 4050607080 90 100 1E-1 1E+0 1E+1 1E+2 1E+3 1E+4 VR(V) IR( µA) Tj=125 °C Tj=25 °C Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 500 VFM(V) IFM(A) Tj=25 °C Tj=125 °C Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). 1E-3 1E-2 1E-1 1E+0 5E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) δ = 0.1 δ = 0.2 δ = 0.5 Single pulse T δ=tp/T tp Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). 1 2 5 10 20 50 100 0.1 1.0 5.0 VR(V) C(nF) F=1MHz Tj=25 °C Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). STPS80H100TV 3/4 |
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