Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1337TZ-E Datenblatt(PDF) 2 Page - Renesas Technology Corp |
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2SK1337TZ-E Datenblatt(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK1337 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 0.3 A Drain peak current ID(pulse) *1 1.2 A Body to drain diode reverse drain current IDR 0.3 A Channel dissipation Pch 400 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 50 µA VDS = 80 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V — 3.5 4.5 Ω ID = 0.2 A, VGS = 10 V * 2 Static drain to source on state resistance RDS(on) — 4.0 6.5 Ω ID = 0.2 A, VGS = 4 V * 2 Forward transfer admittance |yfs| 0.22 0.35 — S ID = 0.2 A, VDS = 10 V * 2 Input capacitance Ciss — 35 — pF Output capacitance Coss — 14 — pF Reverse transfer capacitance Crss — 3.5 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 2 — ns Rise time tr — 4 — ns Turn-off delay time td(off) — 17 — ns Fall time tf — 15 — ns ID = 0.2 A, VGS = 10 V, RL = 150 Ω Body to drain diode forward voltage VDF — 0.9 — V IF = 0.3 A, VGS = 0 Body to drain diode reverse recovery time trr — 80 — ns IF = 0.3 A, VGS = 0, diF/dt = 50 A/ µs Note: 2. Pulse test |
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