Datenblatt-Suchmaschine für elektronische Bauteile |
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STPS80L15CY Datenblatt(PDF) 2 Page - STMicroelectronics |
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STPS80L15CY Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 5 page STPS80L15CY 2/5 Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 0.7 °C/W Total 0.5 Rth (c) Coupling 0.3 THERMAL RESISTANCES Symbol Parameter Tests conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25 °CVR =5V 4 mA Tj = 100 °C 280 400 Tj=25 °CVR = 12V 11 Tj = 100 °C 0.44 1.1 A Tj=25 °CVR = 15V 16 mA Tj = 100 °C 0.53 1.3 A VF * Forward voltage drop Tj = 25 °CIF = 40 A 0.42 V Tj = 100 °CIF = 40 A 0.30 0.33 Tj=25 °CIF = 80 A 0.55 Tj = 100 °CIF = 80 A 0.40 0.46 Pulse test :* tp = 380 µs, δ <2% To evaluate the maximum conduction losses use the following equation : P=0.20xIF(AV) + 0.0032 x IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) |
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