Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1405-E Datenblatt(PDF) 4 Page - Renesas Technology Corp |
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2SK1405-E Datenblatt(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1405 Rev.3.00 May 15, 2006 page 4 of 6 2.0 40 160 Case Temperature TC (°C) 1.6 0.4 080 120 0 0.8 1.2 Static Drain to Source on State Resistance vs. Temperature –40 Pulse Test ID = 20 A 10 A 5 A VGS = 10 V 50 0.5 10 Drain Current ID (A) 10 1 15 5 2 0.2 2 Forward Transfer Admittance vs. Drain Current 20 VDS = 10 V 25 °C TC = –25°C 20 75 °C 0.5 Pulse Test 500 0.5 10 Reverse Drain Current IDR (A) 200 10 15 0.2 50 100 5 2 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, V GS = 0 Ta = 25 °C Pulse Test 20 20 1,000 20 50 Drain to Source Voltage VDS (V) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 100 VGS = 0 f = 1 MHz Crss Coss Ciss 10,000 10 1,000 80 200 Dynamic Input Characteristics 800 200 40 120 160 400 600 20 16 4 0 8 12 0 VGS VDS VDD = 400 V 250 V 100 V ID = 15 A Gate Charge Qg (nc) 250 V 400 V VDD = 100 V 500 Drain Current ID (A) 200 5 50 100 10 Switching Characteristics td (off) 0.5 0.2 1 tf tr td (on) 20 210 520 VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % |
Ähnliche Teilenummer - 2SK1405-E |
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Ähnliche Beschreibung - 2SK1405-E |
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