2SK1671 datasheet(3/7 Pages) RENESAS

Teilenummer	2SK1671

Bauteilbeschribung	Silicon N Channel MOS FET

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Hersteller	RENESAS [Renesas Technology Corp]

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2SK1671

Rev.2.00 Sep 07, 2005 page 3 of 6

Main Characteristics

150

100

50

0

50

100

150

Case Temperature TC (°C)

Power vs. Temperature Derating

1,000

100

3

0.1

10

100

1,000

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

300

0.3

1

3

30

300

Ta = 25

°C

10

µs

100

µs

DC

Operation

(T

C = 25

°C)

1 ms

PW

=

10

ms

(1

Shot

)

30

10

1

Operatio

n in

this

area

is limited

by

R DS

(on)

50

820

Drain to Source Voltage VDS (V)

Typical Output Characteristics

40

10

412

16

Pulse Test

0

20

30

4.5 V

VGS = 4 V

8 V

6 V

10 V

5 V

50

4

10

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

40

10

26

8

–25

°C

0

20

30

VDS = 10 V

Pulse Test

25

°C

TC = 75°C

5

820

Gate to Source Voltage VGS (V)

4

1

412

16

0

2

3

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

10 A

ID = 20 A

Pulse Test

5 A

0.5

2

100

Drain Current ID (A)

0.2

0.01

20

1

0.05

0.1

Static Drain to Source on State

Resistance vs. Drain Current

0.02

0.005

10

VGS = 10, 15 V

Pulse Test

550

Ähnliche Beschreibung - 2SK1671

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